PartNumber | STB6N60M2 | STB6N62K3 | STB6N52K3 |
Description | MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2 | MOSFET N-Channel Power Mosfet D2PAK | IGBT Transistors MOSFET N-Ch 525V 1 Ohm 5A SuperMESH3 Zene |
Manufacturer | STMicroelectronics | STMicroelectronics | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-263-3 | TO-263-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 600 V | 620 V | - |
Id Continuous Drain Current | 4.5 A | 5.5 A | - |
Rds On Drain Source Resistance | 1.06 Ohms | 950 mOhms | - |
Vgs th Gate Source Threshold Voltage | 3 V | - | - |
Vgs Gate Source Voltage | 25 V | 30 V | - |
Qg Gate Charge | 8 nC | 34 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 60 W | 90 W | - |
Configuration | Single | Single | - |
Tradename | MDmesh | - | - |
Packaging | Reel | Reel | - |
Series | STB6N60M2 | STB6N62K3 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | STMicroelectronics | STMicroelectronics | - |
Fall Time | 22.5 ns | 20 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 7.4 ns | 12 ns | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 24 ns | 49 ns | - |
Typical Turn On Delay Time | 9.5 ns | 22 ns | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |