 | | | |
| PartNumber | STD12N50DM2 | STD12N60DM2AG | STD12N50M2 |
| Description | MOSFET N-channel 500 V, 0.299 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package | MOSFET | MOSFET N-channel 500 V, 0.325 Ohm typ., 10 A MDmesh M2 Power MOSFET in a DPAK package |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 650 V | 500 V |
| Id Continuous Drain Current | 11 A | 10 A | 10 A |
| Rds On Drain Source Resistance | 350 mOhms | 440 mOhms | 325 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | 3 V | 2 V |
| Vgs Gate Source Voltage | 25 V | 25 V | 30 V |
| Qg Gate Charge | 120 nC | 14.5 nC | 15 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 110 W | 110 W | 85 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | MDmesh | - | MDmesh |
| Packaging | Reel | Reel | Reel |
| Series | STD12N50DM2 | STD12N60DM2AG | STD12N50M2 |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Forward Transconductance Min | - | - | - |
| Development Kit | - | - | - |
| Fall Time | 9.8 ns | 9.5 ns | 34.5 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 9 ns | 8 ns | 10.5 ns |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 28 ns | 30 ns | 8 ns |
| Typical Turn On Delay Time | 12.5 ns | 15 ns | 13.5 ns |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |
| Qualification | - | AEC-Q101 | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
STMicroelectronics |
STD12N50DM2 | MOSFET N-channel 500 V, 0.299 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package | |
| STD12N60M2 | MOSFET N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in DPAK package | ||
| STD12NF06L-1 | MOSFET N-Ch 60 Volt 12 Amp | ||
| STD12N65M2 | MOSFET N-channel 650 V, 0.42 Ohm typ., 8 A MDmesh M2 Power MOSFET in a DPAK package | ||
| STD12N60DM2AG | MOSFET | ||
| STD12N50M2 | MOSFET N-channel 500 V, 0.325 Ohm typ., 10 A MDmesh M2 Power MOSFET in a DPAK package | ||
| STD12NM50ND | MOSFET N-channel 500 V 11 A Fdmesh | ||
| STD12NF06LT4 | MOSFET N-Ch 60 Volt 12 Amp | ||
| STD12N65M5 | MOSFET POWER MOSFET N-CH 650V | ||
| STD12NM50ND | MOSFET N-CH 500V 11A DPAK | ||
| STD12N65M2 | RF Bipolar Transistors MOSFET N-channel 650 V, 0.42 Ohm typ., 8 A MDmesh M2 Power MOSFET in a DPAK package | ||
| STD12N50DM2 | N-CHANNEL 500 V, 0.35 OHM TYP., | ||
| STD12N50M2 | MOSFET N-CH 500V 10A DPAK | ||
| STD12N60M2 | MOSFET N-CHANNEL 600V 9A DPAK | ||
| STD12N65M5 | MOSFET N-CH 650V 8.5A DPAK | ||
| STD12NF06-1 | MOSFET N-CH 60V 12A IPAK | ||
| STD12NF06L-1 | MOSFET N-CH 60V 12A IPAK | ||
| STD12NF06LT4 | MOSFET N-CH 60V 12A DPAK | ||
| STD12NF06T4 | MOSFET N-CH 60V 12A DPAK | ||
| STD12NM50N | MOSFET N-CH 500V 11A DPAK | ||
ON Semiconductor |
STD12N10T4G | Switching Controllers NFET DPAK SPCL 100V | |
| STD12N10T4G | MOSFET N-CH SPCL 100V DPAK | ||
TE Connectivity |
STD12W-2 | Wire Labels & Markers SNAP ON .18-.24" 2 PRICE PER EA MARKER | |
| STD12W-B | Wire Labels & Markers SNAP ON .18-.24" B PRICE PER EA MARKER | ||
| STD12W-7 | Wire Labels & Markers SNAP ON .18-.24" 7 PRICE PER EA MARKER | ||
| STD12W-C | Wire Labels & Markers SNAP ON .18-.24" C PRICE PER EA MARKER | ||
Raychem / TE Connectivity |
STD12W-4 | Wire Labels & Markers SNAP ON .18-.24" 4 PRICE PER EA MARKER | |
| STD12N60M2-CUT TAPE | New and Original | ||
| STD12NF06LT4-CUT TAPE | New and Original | ||
| STD12NM50ND-CUT TAPE | New and Original | ||
| STD12N65M5 12N65M5 | New and Original | ||
| STD12N50M2 12N50M2 | New and Original | ||
| STD12N06L | MOSFET TO-251 N-CH 60V 12A | ||
| STD12N06LT4 | New and Original | ||
| STD12N06T4 | New and Original | ||
| STD12N10L | New and Original | ||
| STD12NE06 | MOSFET Transistor, N-Channel, TO-252AA | ||
| STD12NE06-TR | New and Original | ||
| STD12NE06L | MOSFET Transistor, N-Channel, TO-252AA | ||
| STD12NE06L-TR | New and Original | ||
| STD12NE06T4 | New and Original | ||
| STD12NF06L | MOSFET, N, LOGIC, D-PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:12A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.08ohm, Rds(on) Test Voltage Vgs:10V, Threshold Volt | ||
| STD12NF06L1 | New and Original | ||
| STD12NF06LT4,D12NF06L,ST | New and Original | ||
| STD12NF06LT4G | New and Original | ||
| STD12NF06T4T4 | New and Original | ||
| STD12NM50NTR | New and Original | ||
| STD12N06 | MOSFET TO-251 N-CH 60V 12A | ||
| STD12NE06LT4 | *** FREE SHIPPING ORDERS OVER $100 *** POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 60V, 0.12OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 | ||
| STD12NF06 | New and Original |