PartNumber | STD13N60DM2 | STD13N65M2 | STD13N60M2 |
Description | MOSFET N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package | MOSFET N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOSFET in DPAK package | MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2 |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 650 V | 650 V |
Id Continuous Drain Current | 11 A | 10 A | 11 A |
Rds On Drain Source Resistance | 310 mOhms | 370 mOhms | 380 mOhms |
Vgs th Gate Source Threshold Voltage | 3 V | 2 V | 3 V |
Vgs Gate Source Voltage | 25 V | 25 V | 25 V |
Qg Gate Charge | 19 nC | 17 nC | 17 nC |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 110 W | 110 W | 110 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | - |
Tradename | MDmesh | - | MDmesh |
Packaging | Reel | Reel | Reel |
Series | STD13N60DM2 | STD13N65M2 | STD13N60M2 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Fall Time | 10.6 ns | 12 ns | 9.5 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 4.8 ns | 7.8 ns | 10 ns |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 42.5 ns | 38 ns | 41 ns |
Typical Turn On Delay Time | 12.3 ns | 11 ns | 11 ns |
Unit Weight | 0.011993 oz | 0.139332 oz | 0.139332 oz |