PartNumber | STD16N60M2 | STD16N65M2 | STD16N50M2 |
Description | MOSFET N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOSFET in DPAK package | MOSFET N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package | MOSFET N-channel 500 V, 0.24 Ohm typ., 13 A MDmesh M2 Power MOSFET in a DPAK package |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 650 V | 550 V |
Id Continuous Drain Current | 12 A | 11 A | 13 A |
Rds On Drain Source Resistance | 280 mOhms | 320 mOhms | 240 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
Vgs Gate Source Voltage | 25 V | 25 V | 25 V |
Qg Gate Charge | 19 nC | 19.5 nC | 19.5 nC |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 110 W | 110 W | 110 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | MDmesh | - | MDmesh |
Packaging | Reel | Reel | Reel |
Series | STD16N60M2 | STD16N65M2 | STD16N50M2 |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Fall Time | 18.5 ns | 11.3 ns | 10 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 9.5 ns | 8.2 ns | 7.6 ns |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 58 ns | 36 ns | 32 ns |
Typical Turn On Delay Time | 10.5 ns | 11.3 ns | 9.6 ns |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
Minimum Operating Temperature | - | - 55 C | - 55 C |