STD2N8

STD2N80K5 vs STD2N80K5-CUT TAPE vs STD2N80

 
PartNumberSTD2N80K5STD2N80K5-CUT TAPESTD2N80
DescriptionMOSFET N-CH 800V 3.5Ohm typ 2A Zener-protected
ManufacturerSTMicroelectronics-STMicroelectronics
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-252-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage800 V--
Id Continuous Drain Current2 A--
Rds On Drain Source Resistance3.5 Ohms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge3 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation110 W--
ConfigurationSingle-Single
TradenameMDmesh--
PackagingReel-Digi-ReelR Alternate Packaging
SeriesSTD2N80K5-SuperMESH5
Transistor Type1 N-Channel-1 N-Channel
BrandSTMicroelectronics--
Product TypeMOSFET--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Unit Weight0.139332 oz-0.139332 oz
Package Case--TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--D-Pak
FET Type--MOSFET N-Channel, Metal Oxide
Power Max--45W
Drain to Source Voltage Vdss--800V
Input Capacitance Ciss Vds--95pF @ 100V
FET Feature--Standard
Current Continuous Drain Id 25°C--2A (Tc)
Rds On Max Id Vgs--4.5 Ohm @ 1A, 10V
Vgs th Max Id--5V @ 100μA
Gate Charge Qg Vgs--3nC @ 10V
Pd Power Dissipation--110 W
Vgs Gate Source Voltage--30 V
Id Continuous Drain Current--2 A
Vds Drain Source Breakdown Voltage--800 V
Vgs th Gate Source Threshold Voltage--4 V
Rds On Drain Source Resistance--3.5 Ohms
Qg Gate Charge--3 nC
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STD2N80K5 MOSFET N-CH 800V 3.5Ohm typ 2A Zener-protected
STD2N80K5 MOSFET N-CH 800V 2A DPAK
STD2N80K5-CUT TAPE New and Original
STD2N80 New and Original
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