STD3NK80ZT

STD3NK80ZT4 vs STD3NK80ZT vs STD3NK80ZT4,D3NK80Z

 
PartNumberSTD3NK80ZT4STD3NK80ZTSTD3NK80ZT4,D3NK80Z
DescriptionMOSFET N-Ch 800 Volt 2.5A Zener SuperMESH
ManufacturerSTMicroelectronicsST-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage800 V--
Id Continuous Drain Current2.5 A--
Rds On Drain Source Resistance4.5 Ohms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge19 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation70 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameSuperMESH--
PackagingReelReel-
Height2.4 mm--
Length6.6 mm--
SeriesSTD3NK80ZT4STD3NK80Z-
Transistor Type1 N-Channel Power MOSFET1 N-Channel-
TypeMOSFET--
Width6.2 mm--
BrandSTMicroelectronics--
Fall Time40 ns40 ns-
Product TypeMOSFET--
Rise Time27 ns27 ns-
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time36 ns36 ns-
Typical Turn On Delay Time17 ns17 ns-
Unit Weight0.139332 oz0.139332 oz-
Package Case-TO-252-3-
Pd Power Dissipation-70 W-
Vgs Gate Source Voltage-30 V-
Id Continuous Drain Current-2.5 A-
Vds Drain Source Breakdown Voltage-800 V-
Rds On Drain Source Resistance-4.5 Ohms-
Qg Gate Charge-19 nC-
Forward Transconductance Min-2.1 S-
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STD3NK80ZT4 MOSFET N-Ch 800 Volt 2.5A Zener SuperMESH
STD3NK80ZT4 MOSFET N-CH 800V 2.5A DPAK
STD3NK80ZT New and Original
STD3NK80ZT4,D3NK80Z New and Original
STD3NK80ZT4,D3NK80Z,3NK8 New and Original
STD3NK80ZT4,D3NK80Z,3NK80,3N80 New and Original
STD3NK80ZT4,D3NK80Z,3NK80,3N80, New and Original
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