STE8

STE88N65M5 vs STE80N50 vs STE89C52RC40I-LQFP44

 
PartNumberSTE88N65M5STE80N50STE89C52RC40I-LQFP44
DescriptionMOSFET N-channel 650 V, 0.024 Ohm typ., 88 A MDmesh M5 Power MOSFET in a ISOTOP package
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseISOTOP-4--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current88 A--
Rds On Drain Source Resistance24 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage25 V--
Qg Gate Charge204 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation494 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameMDmesh--
PackagingTube--
SeriesSTE88N65M5--
BrandSTMicroelectronics--
Fall Time29 ns--
Product TypeMOSFET--
Rise Time16 ns--
Factory Pack Quantity100--
SubcategoryMOSFETs--
Unit Weight1 oz--
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STE88N65M5 MOSFET N-channel 650 V, 0.024 Ohm typ., 88 A MDmesh M5 Power MOSFET in a ISOTOP package
STE88N65M5 IGBT Transistors MOSFET POWER MOSFET
STE80N50 New and Original
STE89C52RC40I-LQFP44 New and Original
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