PartNumber | STFV3N150 | STFV4N150 |
Description | MOSFET N-channel 1500V | MOSFET IGBT |
Manufacturer | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 1.5 kV | 1.5 kV |
Id Continuous Drain Current | 2.5 A | 4 A |
Rds On Drain Source Resistance | 9 Ohms | 7 Ohms |
Vgs Gate Source Voltage | 30 V | 30 V |
Minimum Operating Temperature | - 50 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 30 W | 40 W |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Packaging | Tube | Tube |
Height | 16.4 mm | 16.4 mm |
Length | 10.4 mm | 10.4 mm |
Series | STFV3N150 | STFV4N150 |
Transistor Type | 1 N-Channel | 1 N-Channel |
Width | 4.6 mm | 4.6 mm |
Brand | STMicroelectronics | STMicroelectronics |
Fall Time | 61 ns | 45 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 47 ns | 30 ns |
Factory Pack Quantity | 50 | 1000 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 45 ns | 45 ns |
Typical Turn On Delay Time | 24 ns | 35 ns |
Unit Weight | 0.011640 oz | 0.011640 oz |
Forward Transconductance Min | - | 3.5 S |