PartNumber | STGB10H60DF | STGB10M65DF2 | STGB10NB37LZ |
Description | IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 10 A high speed | IGBT Transistors Trench gate field-stop IGBT M series, 650 V 10 A low loss | IGBT Transistors 10 A 410V INTERNALLY CLAMPED IGBT |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Package / Case | D2PAK | - | D2PAK-3 |
Mounting Style | SMD/SMT | - | SMD/SMT |
Configuration | Single | - | Single |
Collector Emitter Voltage VCEO Max | 600 V | - | 1.8 V |
Collector Emitter Saturation Voltage | 1.5 V | - | 1.2 V |
Maximum Gate Emitter Voltage | 20 V | - | 16 V |
Continuous Collector Current at 25 C | 20 A | - | 20 A |
Pd Power Dissipation | 115 W | - | 125 W |
Minimum Operating Temperature | - 55 C | - | - 65 C |
Maximum Operating Temperature | + 175 C | - | + 150 C |
Series | STGB10H60DF | STGB10M65DF2 | STGB10NB37LZ |
Packaging | Reel | Reel | Tube |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Gate Emitter Leakage Current | 250 nA | - | 700 uA |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 1000 | 1000 | 50 |
Subcategory | IGBTs | IGBTs | IGBTs |
Unit Weight | 0.070548 oz | - | 0.079014 oz |
Continuous Collector Current Ic Max | - | - | 20 A |
Height | - | - | 4.6 mm |
Length | - | - | 10.4 mm |
Width | - | - | 9.35 mm |
Continuous Collector Current | - | - | 20 A |