PartNumber | STGD4M65DF2 | STGD3NB60SDT4 | STGD3NC120H-1 |
Description | IGBT Transistors PTD HIGH VOLTAGE | IGBT Transistors N-Ch 600 Volt 3 Amp | IGBT Transistors 7 A, 1200 V very fast IGBT |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Package / Case | DPAK-3 | TO-252-3 | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 650 V | 600 V | - |
Collector Emitter Saturation Voltage | 1.6 V | 1.5 V | - |
Maximum Gate Emitter Voltage | 20 V | 20 V | - |
Continuous Collector Current at 25 C | 8 A | 6 A | - |
Pd Power Dissipation | 68 W | 48 W | - |
Minimum Operating Temperature | - 55 C | - 65 C | - |
Maximum Operating Temperature | + 175 C | + 150 C | - |
Series | STGD4M65DF2 | STGD3NB60SD | STGD3NC120H |
Packaging | Reel | Reel | - |
Continuous Collector Current Ic Max | 8 A | 6 A | - |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Gate Emitter Leakage Current | +/- 250 uA | +/- 100 nA | - |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 2500 | 2500 | 3000 |
Subcategory | IGBTs | IGBTs | IGBTs |
Qualification | - | AEC-Q101 | - |
Height | - | 2.4 mm | - |
Length | - | 6.6 mm | - |
Width | - | 6.2 mm | - |
Continuous Collector Current | - | 3 A | - |
Unit Weight | - | 0.139332 oz | - |