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| PartNumber | STGD3NB60SDT4 | STGD3NB60FT4 |
| Description | IGBT Transistors N-Ch 600 Volt 3 Amp | IGBT Transistors N-Ch 600 Volt 3.0 A |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y |
| Technology | Si | Si |
| Package / Case | TO-252-3 | DPAK-3 |
| Mounting Style | SMD/SMT | SMD/SMT |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V |
| Collector Emitter Saturation Voltage | 1.5 V | 1.9 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V |
| Continuous Collector Current at 25 C | 6 A | 3 A |
| Pd Power Dissipation | 48 W | 60 W |
| Minimum Operating Temperature | - 65 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Series | STGD3NB60SD | STGD3NB60F |
| Qualification | AEC-Q101 | - |
| Packaging | Reel | Reel |
| Continuous Collector Current Ic Max | 6 A | 6 A |
| Height | 2.4 mm | 2.4 mm |
| Length | 6.6 mm | 6.6 mm |
| Width | 6.2 mm | 6.2 mm |
| Brand | STMicroelectronics | STMicroelectronics |
| Continuous Collector Current | 3 A | 3 A |
| Gate Emitter Leakage Current | +/- 100 nA | 100 nA |
| Product Type | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | IGBTs | IGBTs |
| Unit Weight | 0.139332 oz | 0.012346 oz |