STGD3NB60S

STGD3NB60SDT4 vs STGD3NB60S vs STGD3NB60SD

 
PartNumberSTGD3NB60SDT4STGD3NB60SSTGD3NB60SD
DescriptionIGBT Transistors N-Ch 600 Volt 3 Amp
ManufacturerSTMicroelectronics-STMicroelectronics
Product CategoryIGBT Transistors-IGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-252-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.5 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C6 A--
Pd Power Dissipation48 W--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesSTGD3NB60SD-PowerMESH
QualificationAEC-Q101--
PackagingReel-Tube
Continuous Collector Current Ic Max6 A--
Height2.4 mm--
Length6.6 mm--
Width6.2 mm--
BrandSTMicroelectronics--
Continuous Collector Current3 A--
Gate Emitter Leakage Current+/- 100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity2500--
SubcategoryIGBTs--
Unit Weight0.139332 oz--
Package Case--TO-252-3, DPak (2 Leads + Tab), SC-63
Input Type--Standard
Mounting Type--Surface Mount
Supplier Device Package--D-Pak
Power Max--48W
Reverse Recovery Time trr--1.7μs
Current Collector Ic Max--6A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type---
Current Collector Pulsed Icm--25A
Vce on Max Vge Ic--1.5V @ 15V, 3A
Switching Energy--1.1mJ (on), 1.15mJ (off)
Gate Charge--18nC
Td on off 25°C--125μs/3.4μs
Test Condition--480V, 3A, 1 kOhm, 15V
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STGD3NB60SDT4 IGBT Transistors N-Ch 600 Volt 3 Amp
STGD3NB60SDT4 IGBT Transistors N-Ch 600 Volt 3 Amp
STGD3NB60SDT4-CUT TAPE New and Original
STGD3NB60S New and Original
STGD3NB60SD New and Original
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