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| PartNumber | STGD6M65DF2 | STGD6NC60H-1 | STGD6NC60HDT4 |
| Description | IGBT Transistors PTD HIGH VOLTAGE | IGBT Transistors N-channel 600 V, 7 A very fast IGBT | IGBT Transistors PowerMESH" IGBT |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Package / Case | DPAK-3 | IPAK-3 | DPAK-3 |
| Mounting Style | SMD/SMT | Through Hole | SMD/SMT |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 650 V | 600 V | 600 V |
| Collector Emitter Saturation Voltage | 1.55 V | 1.9 V | 1.9 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Continuous Collector Current at 25 C | 12 A | 15 A | - |
| Pd Power Dissipation | 88 W | 62.5 W | 50 W |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
| Series | STGD6M65DF2 | STGD6NC60H-1 | STGD6NC60HDT4 |
| Packaging | Reel | Tube | Reel |
| Continuous Collector Current Ic Max | 12 A | - | 15 A |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Gate Emitter Leakage Current | +/- 250 uA | 100 nA | 100 nA |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 2500 | 3000 | 2500 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Tradename | - | PowerMESH | - |
| Unit Weight | - | 0.139332 oz | 0.012346 oz |
| Height | - | - | 2.4 mm |
| Length | - | - | 6.6 mm |
| Width | - | - | 6.2 mm |
| Continuous Collector Current | - | - | 6 A |