STGD6

STGD6M65DF2 vs STGD6NC60H-1 vs STGD6NC60HDT4

 
PartNumberSTGD6M65DF2STGD6NC60H-1STGD6NC60HDT4
DescriptionIGBT Transistors PTD HIGH VOLTAGEIGBT Transistors N-channel 600 V, 7 A very fast IGBTIGBT Transistors PowerMESH&#34 IGBT
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
RoHSYYY
TechnologySiSiSi
Package / CaseDPAK-3IPAK-3DPAK-3
Mounting StyleSMD/SMTThrough HoleSMD/SMT
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max650 V600 V600 V
Collector Emitter Saturation Voltage1.55 V1.9 V1.9 V
Maximum Gate Emitter Voltage20 V20 V20 V
Continuous Collector Current at 25 C12 A15 A-
Pd Power Dissipation88 W62.5 W50 W
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 150 C+ 150 C
SeriesSTGD6M65DF2STGD6NC60H-1STGD6NC60HDT4
PackagingReelTubeReel
Continuous Collector Current Ic Max12 A-15 A
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Gate Emitter Leakage Current+/- 250 uA100 nA100 nA
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity250030002500
SubcategoryIGBTsIGBTsIGBTs
Tradename-PowerMESH-
Unit Weight-0.139332 oz0.012346 oz
Height--2.4 mm
Length--6.6 mm
Width--6.2 mm
Continuous Collector Current--6 A
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STGD6M65DF2 IGBT Transistors PTD HIGH VOLTAGE
STGD6NC60H-1 IGBT Transistors N-channel 600 V, 7 A very fast IGBT
STGD6NC60HDT4 IGBT Transistors PowerMESH&#34 IGBT
STGD6NC60HT4 IGBT Transistors PowerMESH&#34 IGBT
STGD6NC60HDT4 IGBT 600V 15A 56W DPAK
STGD6NC60H-1 IGBT Transistors IGBT & Power Bipola
STGD6M65DF2 TRENCH GATE FIELD-STOP IGBT, M S
STGD6NC60HT4 IGBT 600V 15A 56W DPAK
STGD6NC60HDT4-CUT TAPE New and Original
STGD6N60 New and Original
STGD6NC60 New and Original
STGD6NC60H New and Original
STGD6NC60HD New and Original
STGD6NC60H_07 New and Original
STGD6NC6HDT4 New and Original
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