STGE

STGE200NB60S vs STGE50NC60VD vs STGE50NB60HD

 
PartNumberSTGE200NB60SSTGE50NC60VDSTGE50NB60HD
DescriptionIGBT Modules N-Ch 600 Volt 150AmpIGBT Transistors N-chnl 50A-600V PowerMESHIGBT N-CHAN 600V 50A ISOTOP
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryIGBT ModulesIGBT TransistorsModule
RoHSYY-
ConfigurationSingle Dual EmitterSingle Dual EmitterSingle
Collector Emitter Voltage VCEO Max600 V600 V-
Collector Emitter Saturation Voltage1.2 V--
Continuous Collector Current at 25 C200 A--
Gate Emitter Leakage Current100 nA--
Pd Power Dissipation600 W--
Package / CaseISOTOP-4ISOTOP-4-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
PackagingTubeTube-
Height9.1 mm9.1 mm-
Length38.2 mm38.2 mm-
SeriesSTGE200NB60SSTGE50NC60VDPowerMESH
Width25.5 mm25.5 mm-
BrandSTMicroelectronicsSTMicroelectronics-
Mounting StyleThrough HoleThrough Hole-
Maximum Gate Emitter Voltage20 V20 V-
Product TypeIGBT ModulesIGBT Transistors-
Factory Pack Quantity10010-
SubcategoryIGBTsIGBTs-
TradenamePowerMESH--
Unit Weight1 oz1 oz-
Technology-Si-
Continuous Collector Current Ic Max-80 A-
Package Case--ISOTOP
Mounting Type--Chassis Mount
Supplier Device Package--ISOTOP
Input--Standard
Power Max--300W
Current Collector Ic Max--100A
Voltage Collector Emitter Breakdown Max--600V
Current Collector Cutoff Max--250μA
IGBT Type---
Vce on Max Vge Ic--2.8V @ 15V, 50A
Input Capacitance Cies Vce--4.5nF @ 25V
NTC Thermistor--No
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STGE200NB60S IGBT Modules N-Ch 600 Volt 150Amp
STGE50NC60VD IGBT Transistors N-chnl 50A-600V PowerMESH
STGE50NC60WD IGBT Transistors N-Ch 600volt 50 Amp
STGE50NC60VD IGBT Transistors N-chnl 50A-600V PowerMESH
STGE50NC60WD IGBT Transistors N-Ch 600volt 50 Amp
STGE200NB60S IGBT Transistors N-Ch 600 Volt 150Amp
STGE50NB60HD IGBT N-CHAN 600V 50A ISOTOP
STGE New and Original
STGE2547A New and Original
STGE40N60D New and Original
STGE50N60D New and Original
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