PartNumber | STGF10M65DF2 | STGF10NB60SD | STGF10H60DF |
Description | IGBT Transistors Trench gate field-stop IGBT M series, 650 V 10 A low loss | IGBT Transistors N-Ch 600 Volt 10 Amp | IGBT Transistors Trench gate H series 600V 10A HiSpd |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Package / Case | TO-220FP-3 | TO-220-3 FP | TO-220-3 FP |
Mounting Style | Through Hole | Through Hole | Through Hole |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 650 V | 600 V | 600 V |
Collector Emitter Saturation Voltage | 1.8 V | 1.8 V | 1.5 V |
Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
Continuous Collector Current at 25 C | 20 A | 20 A | 20 A |
Pd Power Dissipation | 30 W | 25 W | 30 W |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 150 C | + 175 C |
Series | STGF10M65DF2 | STGF10NB60SD | STGF10H60DF |
Continuous Collector Current Ic Max | 20 A | 20 A | 10 A |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Gate Emitter Leakage Current | +/- 250 uA | +/- 100 nA | 250 nA |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | IGBTs | IGBTs | IGBTs |
Unit Weight | 0.068784 oz | 0.081130 oz | 0.081130 oz |
Packaging | - | Tube | - |
Height | - | 9.3 mm | - |
Length | - | 10.4 mm | - |
Width | - | 4.6 mm | - |
Continuous Collector Current | - | 10 A | - |