| PartNumber | STGF10M65DF2 | STGF10NB60SD | STGF10H60DF |
| Description | IGBT Transistors Trench gate field-stop IGBT M series, 650 V 10 A low loss | IGBT Transistors N-Ch 600 Volt 10 Amp | IGBT Transistors Trench gate H series 600V 10A HiSpd |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Package / Case | TO-220FP-3 | TO-220-3 FP | TO-220-3 FP |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 650 V | 600 V | 600 V |
| Collector Emitter Saturation Voltage | 1.8 V | 1.8 V | 1.5 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Continuous Collector Current at 25 C | 20 A | 20 A | 20 A |
| Pd Power Dissipation | 30 W | 25 W | 30 W |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 150 C | + 175 C |
| Series | STGF10M65DF2 | STGF10NB60SD | STGF10H60DF |
| Continuous Collector Current Ic Max | 20 A | 20 A | 10 A |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Gate Emitter Leakage Current | +/- 250 uA | +/- 100 nA | 250 nA |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 0.068784 oz | 0.081130 oz | 0.081130 oz |
| Packaging | - | Tube | - |
| Height | - | 9.3 mm | - |
| Length | - | 10.4 mm | - |
| Width | - | 4.6 mm | - |
| Continuous Collector Current | - | 10 A | - |