STGF15M

STGF15M65DF2 vs STGF15M65DF2 G15M65DF2 vs STGF15M65

 
PartNumberSTGF15M65DF2STGF15M65DF2 G15M65DF2STGF15M65
DescriptionIGBT Transistors Trench gate field-stop IGBT M series, 650 V 15 A low loss
ManufacturerSTMicroelectronics-STMicroelectronics
Product CategoryIGBT Transistors-IGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-220FP-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max650 V--
Collector Emitter Saturation Voltage1.55 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C30 A--
Pd Power Dissipation31 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
SeriesSTGF15M65DF2--
Continuous Collector Current Ic Max30 A--
BrandSTMicroelectronics--
Gate Emitter Leakage Current+/- 250 uA--
Product TypeIGBT Transistors--
Factory Pack Quantity1000--
SubcategoryIGBTs--
Unit Weight0.081130 oz--
Packaging--Tube
Package Case--TO-220-3 Full Pack
Input Type--Standard
Mounting Type--Through Hole
Supplier Device Package--TO-220FP
Power Max--31W
Reverse Recovery Time trr--142ns
Current Collector Ic Max--30A
Voltage Collector Emitter Breakdown Max--650V
IGBT Type--Trench Field Stop
Current Collector Pulsed Icm--60A
Vce on Max Vge Ic--2V @ 15V, 15A
Switching Energy--90μJ (on), 450μJ (off)
Gate Charge--45nC
Td on off 25°C--24ns/93ns
Test Condition--400V, 15A, 12 Ohm, 15V
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STGF15M65DF2 IGBT Transistors Trench gate field-stop IGBT M series, 650 V 15 A low loss
STGF15M65DF2 TRENCH GATE FIELD-STOP IGBT M SE
STGF15M65DF2 G15M65DF2 New and Original
STGF15M65 New and Original
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