STGF2

STGF20M65DF2 vs STGF20NB60S vs STGF20H60DF

 
PartNumberSTGF20M65DF2STGF20NB60SSTGF20H60DF
DescriptionIGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A low lossIGBT Transistors N Ch 13A-600VIGBT Transistors 600V 20A High Speed Trench Gate IGBT
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
RoHSYYY
TechnologySiSiSi
Package / CaseTO-220FP-3TO-220-3 FPTO-220-3 FP
Mounting StyleThrough HoleThrough HoleThrough Hole
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max650 V600 V600 V
Collector Emitter Saturation Voltage1.55 V-2 V
Maximum Gate Emitter Voltage20 V20 V20 V
Continuous Collector Current at 25 C40 A-40 A
Pd Power Dissipation32.6 W-37 W
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 150 C+ 175 C
SeriesSTGF20M65DF2STGF20NB60SSTGF20H60DF
Continuous Collector Current Ic Max40 A24 A-
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Gate Emitter Leakage Current250 uA-250 nA
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity100010001000
SubcategoryIGBTsIGBTsIGBTs
Unit Weight0.068784 oz0.081130 oz0.081130 oz
Packaging-TubeTube
Height-9.3 mm-
Length-10.4 mm-
Width-4.6 mm-
Tradename-PowerMESH-
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STGF20M65DF2 IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A low loss
STGF20NB60S IGBT Transistors N Ch 13A-600V
STGF20H60DF IGBT Transistors 600V 20A High Speed Trench Gate IGBT
STGF20NB60S IGBT Transistors N Ch 13A-600V
STGF20H60DF IGBT Transistors 600V 20A High Speed Trench Gate IGBT
STGF20V60DF IGBT BIPO 600V 20A TO-220
STGF20M65DF2 IGBT TRENCH 650V 40A TO220FP
STGF20H60DF GF20H60DF New and Original
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