STGF30

STGF30M65DF2 vs STGF30H60DF vs STGF30NC60S

 
PartNumberSTGF30M65DF2STGF30H60DFSTGF30NC60S
DescriptionIGBT Transistors Trench gate field-stop IGBT M series, 650 V 30 A low lossIGBT 600V 60A 37W TO220FPIGBT 600V 22A 40W TO220FP
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-220FP-3--
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max650 V--
Collector Emitter Saturation Voltage1.55 V2.4 V-
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C60 A60 A-
Pd Power Dissipation38 W--
Minimum Operating Temperature- 55 C- 40 C-
Maximum Operating Temperature+ 175 C+ 175 C-
SeriesSTGF30M65DF2600-650V IGBTs-
Continuous Collector Current Ic Max60 A--
BrandSTMicroelectronics--
Gate Emitter Leakage Current+/- 250 uA250 nA-
Product TypeIGBT Transistors--
Factory Pack Quantity1000--
SubcategoryIGBTs--
Unit Weight0.068784 oz0.081130 oz-
Packaging-Tube-
Package Case-TO-220-3 Full Pack-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-TO-220FP-
Power Max-37W-
Reverse Recovery Time trr-110ns-
Current Collector Ic Max-60A-
Voltage Collector Emitter Breakdown Max-600V-
IGBT Type-Trench Field Stop-
Current Collector Pulsed Icm-120A-
Vce on Max Vge Ic-2.4V @ 15V, 30A-
Switching Energy-350μJ (on), 400μJ (off)-
Gate Charge-105nC-
Td on off 25°C-50ns/160ns-
Test Condition-400V, 30A, 10 Ohm, 15V-
Pd Power Dissipation-37 W-
Collector Emitter Voltage VCEO Max-600 V-
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STGF30M65DF2 IGBT Transistors Trench gate field-stop IGBT M series, 650 V 30 A low loss
STGF30V60DF IGBT Transistors IGBT & Power Bipolar
STGF30H60DF IGBT 600V 60A 37W TO220FP
STGF30M65DF2 IGBT TRENCH 650V 60A TO220FP
STGF30V60DF IGBT BIPO 600V 30A TO-220
STGF30NC60S IGBT 600V 22A 40W TO220FP
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