STGF7NB

STGF7NB60SL vs STGF7NB60HDFP vs STGF7NB60S

 
PartNumberSTGF7NB60SLSTGF7NB60HDFPSTGF7NB60S
DescriptionIGBT Transistors N-CH 7 A - 600V POWERMESH IGBT
ManufacturerSTMicroelectronicsSTSTMicroelectronics
Product CategoryIGBT TransistorsIC ChipsIGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-220-3 FP--
Mounting StyleThrough Hole-Through Hole
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.2 V-1.2 V
Maximum Gate Emitter Voltage20 V-+/- 20 V
Continuous Collector Current at 25 C15 A-15 A
Pd Power Dissipation25 W--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesSTGF7NB60SL-PowerMESH
PackagingTube-Tube
Continuous Collector Current Ic Max15 A-15 A
Height9.3 mm--
Length10.4 mm--
Width4.6 mm--
BrandSTMicroelectronics--
Continuous Collector Current7 A, 15 A--
Gate Emitter Leakage Current+/- 100 nA-+/- 100 nA
Product TypeIGBT Transistors--
Factory Pack Quantity1000--
SubcategoryIGBTs--
TradenamePowerMESH--
Unit Weight0.081130 oz-0.081130 oz
Package Case--TO-220-3 Full Pack
Input Type--Standard
Mounting Type--Through Hole
Supplier Device Package--TO-220FP
Power Max--25W
Reverse Recovery Time trr---
Current Collector Ic Max--15A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type---
Current Collector Pulsed Icm--20A
Vce on Max Vge Ic--1.6V @ 4.5V, 7A
Switching Energy--4.1mJ (off)
Gate Charge--16nC
Td on off 25°C--1.1μs/5.2μs
Test Condition--480V, 7A, 1 kOhm, 5V
Pd Power Dissipation--25 W
Collector Emitter Voltage VCEO Max--600 V
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STGF7NB60SL IGBT Transistors N-CH 7 A - 600V POWERMESH IGBT
STGF7NB60SL IGBT 600V 15A 25W TO220FP
STGF7NB60HDFP New and Original
STGF7NB60S New and Original
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