STGFW4

STGFW40V60F vs STGFW40H65FB vs STGFW40V60DF

 
PartNumberSTGFW40V60FSTGFW40H65FBSTGFW40V60DF
DescriptionIGBT Transistors Trench gate field-stop IGBT, V series 600 V, 40 A very high speedIGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 40 A high speedIGBT Transistors Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
RoHSYYY
TechnologySiSiSi
Package / CaseTO-3PFTO-3PFTO-3PF
Mounting StyleThrough HoleThrough HoleThrough Hole
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max600 V650 V600 V
Collector Emitter Saturation Voltage1.8 V2 V1.8 V
Maximum Gate Emitter Voltage20 V-20 V
Continuous Collector Current at 25 C80 A80 A80 A
Pd Power Dissipation62.5 W62.5 W62.5 W
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
SeriesSTGFW40V60FSTGFW40H65FBSTGFW40V60DF
PackagingTube-Tube
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Gate Emitter Leakage Current250 nA250 nA250 nA
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity300300300
SubcategoryIGBTsIGBTsIGBTs
Unit Weight0.245577 oz0.245577 oz0.245577 oz
Continuous Collector Current Ic Max--40 A
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STGFW40V60F IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
STGFW40H65FB IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
STGFW40V60DF IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
STGFW40V60DF IGBT Transistors IGBT & Power Bipola
STGFW40V60F IGBT Transistors IGBT & Power Bipola
STGFW40H65FB IGBT HB 650V 40A ISOWATT218
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