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| PartNumber | STGW40V60DF | STGW40V60DLF |
| Description | IGBT Transistors 600V 40A High Speed Trench Gate IGBT | IGBT Transistors 600V 40A High Speed Trench Gate IGBT |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y |
| Technology | Si | Si |
| Package / Case | TO-247 | TO-247 |
| Mounting Style | Through Hole | Through Hole |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V |
| Collector Emitter Saturation Voltage | 2.35 V | 2.35 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V |
| Continuous Collector Current at 25 C | 80 A | 80 A |
| Pd Power Dissipation | 283 W | 283 W |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Series | STGW40V60DF | STGW40V60DLF |
| Packaging | Tube | Tube |
| Brand | STMicroelectronics | STMicroelectronics |
| Gate Emitter Leakage Current | 250 nA | 250 nA |
| Product Type | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 600 | 600 |
| Subcategory | IGBTs | IGBTs |
| Unit Weight | 0.229281 oz | 0.229281 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
STMicroelectronics |
STGW40V60DF | IGBT Transistors 600V 40A High Speed Trench Gate IGBT | |
| STGW40V60DLF | IGBT Transistors 600V 40A High Speed Trench Gate IGBT | ||
| STGW40V60DF | IGBT 600V 80A 283W TO247 | ||
| STGW40V60DLF | IGBT Transistors 600V 40A High Speed Trench Gate IGBT | ||
| STGW40V60D | New and Original | ||
| STGW40V60DF GW40V60DF | New and Original | ||
| STGW40V60DF,STGWT40V60DF | New and Original |