PartNumber | STGW50HF60SD | STGW50HF60S | STGW50H60DF |
Description | IGBT 600V 110A 284W TO247 | IGBT Transistors 60A 600V Very Low Drop IGBT 600Vces | IGBT Transistors 50A 600V FST IGBT Ultrafast Diode |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | IGBTs - Single | IGBTs - Single | IGBTs - Single |
Series | 600-650V IGBTs | 600-650V IGBTs | 600-650V IGBTs |
Packaging | Tube | Tube | Tube |
Unit Weight | 6500 g | 0.229281 oz | 0.229281 oz |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package Case | TO-247 | TO-247-3 | TO-247-3 |
Input Type | Standard | Standard | Standard |
Mounting Type | Through Hole | Through Hole | Through Hole |
Supplier Device Package | TO-247-3 | TO-247-3 | TO-247 |
Configuration | Single | Single | - |
Power Max | 284W | 284W | 360W |
Reverse Recovery Time trr | 67ns | - | 55ns |
Current Collector Ic Max | 110A | 110A | 100A |
Voltage Collector Emitter Breakdown Max | 600V | 600V | 600V |
IGBT Type | - | - | Trench Field Stop |
Current Collector Pulsed Icm | 130A | 130A | 200A |
Vce on Max Vge Ic | 1.45V @ 15V, 30A | 1.45V @ 15V, 30A | 1.8V @ 15V, 50A |
Switching Energy | 250μJ (on), 4.2mJ (off) | 250μJ (on), 4.2mJ (off) | 890μJ (on), 860μJ (off) |
Gate Charge | 200nC | 200nC | 217nC |
Td on off 25°C | 50ns/220ns | 50ns/220ns | 62ns/178ns |
Test Condition | 400V, 30A, 10 Ohm, 15V | 400V, 30A, 10 Ohm, 15V | 400V, 50A, 10 Ohm, 15V |
Pd Power Dissipation | 284 W | 284 W | 360 W |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Collector Emitter Voltage VCEO Max | 600 V | 600 V | - |
Collector Emitter Saturation Voltage | 1.15 V | 1.15 V | 1.8 V |
Continuous Collector Current at 25 C | 110 A | 110 A | 100 A |
Gate Emitter Leakage Current | +/- 100 nA | +/- 100 nA | 250 nA |
Maximum Gate Emitter Voltage | +/- 20 V | +/- 20 V | +/- 20 V |