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STGW60V

STGW60V60F vs STGW60V60DF vs STGW60V60DLF

 
PartNumberSTGW60V60FSTGW60V60DFSTGW60V60DLF
DescriptionIGBT Transistors 600V 60A Trench Gate 1.8V Vce IGBTIGBT Transistors 600V 60A High Speed Trench Gate IGBTIGBT BIPO 600V 60A TO247
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryIGBT TransistorsIGBT TransistorsIGBTs - Single
RoHSYY-
TechnologySiSi-
Package / CaseTO-247-3TO-247-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V600 V-
Collector Emitter Saturation Voltage2.35 V2.35 V-
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C80 A80 A-
Pd Power Dissipation375 W375 W-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
SeriesSTGW60V60FSTGW60V60DF*
PackagingTubeTube-
Continuous Collector Current Ic Max60 A--
BrandSTMicroelectronicsSTMicroelectronics-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity600600-
SubcategoryIGBTsIGBTs-
Unit Weight1.340411 oz0.229281 oz-
Gate Emitter Leakage Current-250 nA-
Package Case---
Input Type---
Mounting Type---
Supplier Device Package---
Power Max---
Reverse Recovery Time trr---
Current Collector Ic Max---
Voltage Collector Emitter Breakdown Max---
IGBT Type---
Current Collector Pulsed Icm---
Vce on Max Vge Ic---
Switching Energy---
Gate Charge---
Td on off 25°C---
Test Condition---
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics 		STGW60V60F IGBT Transistors 600V 60A Trench Gate 1.8V Vce IGBT
STGW60V60DF IGBT Transistors 600V 60A High Speed Trench Gate IGBT
STGW60V60DF IGBT 600V 80A 375W TO247
STGW60V60F IGBT Transistors 600V 60A Trench Gate 1.8V Vce IGBT
STGW60V60DLF IGBT BIPO 600V 60A TO247
STGW60V60DF GW60V60DF New and Original
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