STGWA2

STGWA20M65DF2 vs STGWA25H120DF2 vs STGWA25H120F2

 
PartNumberSTGWA20M65DF2STGWA25H120DF2STGWA25H120F2
DescriptionIGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A low lossIGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speedIGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
RoHSY--
TechnologySiSiSi
Package / CaseTO-247-3--
Mounting StyleThrough HoleThrough HoleThrough Hole
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max650 V1200 V1200 V
Collector Emitter Saturation Voltage1.55 V2.5 V2.5 V
Maximum Gate Emitter Voltage20 V20 V20 V
Continuous Collector Current at 25 C40 A50 A50 A
Pd Power Dissipation166 W375 W375 W
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
SeriesSTGWA20M65DF2STGWA25H120DF2STGWA25H120F2
Continuous Collector Current Ic Max40 A--
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Gate Emitter Leakage Current250 uA250 nA250 nA
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity600600600
SubcategoryIGBTsIGBTsIGBTs
Unit Weight0.211644 oz0.215171 oz-
Continuous Collector Current-25 A25 A
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STGWA20M65DF2 IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A low loss
STGWA25H120DF2 IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
STGWA25H120F2 IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
STGWA25S120DF3 IGBT Transistors Trench gate field-stop IGBT, S series 1200 V, 25 A low drop
STGWA25M120DF3 IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
STGWA25M120DF3 IGBT Transistors IGBT & Power Bipola
STGWA20M65DF2 IGBT TRENCH 650V 40A TO247
STGWA25H120DF2 IGBT HB 1200V 25A HS TO247-3
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