PartNumber | STGWA20M65DF2 | STGWA25H120DF2 | STGWA25H120F2 |
Description | IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A low loss | IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed | IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | - | - |
Technology | Si | Si | Si |
Package / Case | TO-247-3 | - | - |
Mounting Style | Through Hole | Through Hole | Through Hole |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 650 V | 1200 V | 1200 V |
Collector Emitter Saturation Voltage | 1.55 V | 2.5 V | 2.5 V |
Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
Continuous Collector Current at 25 C | 40 A | 50 A | 50 A |
Pd Power Dissipation | 166 W | 375 W | 375 W |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Series | STGWA20M65DF2 | STGWA25H120DF2 | STGWA25H120F2 |
Continuous Collector Current Ic Max | 40 A | - | - |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Gate Emitter Leakage Current | 250 uA | 250 nA | 250 nA |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 600 | 600 | 600 |
Subcategory | IGBTs | IGBTs | IGBTs |
Unit Weight | 0.211644 oz | 0.215171 oz | - |
Continuous Collector Current | - | 25 A | 25 A |