PartNumber | STGWA30H65FB | STGWA30H60DFB | STGWA30H65DFB |
Description | IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed | IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed | IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed in a TO-247 long leads package |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Technology | Si | Si | Si |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Mounting Style | Through Hole | Through Hole | Through Hole |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 650 V | 600 V | 650 V |
Collector Emitter Saturation Voltage | 1.55 V | 1.55 V | 1.55 V |
Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
Continuous Collector Current at 25 C | 60 A | 60 A | 60 A |
Pd Power Dissipation | 260 W | 260 W | 260 W |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Series | STGWA30H65FB | STGWA30H60DFB | STGWA30H65DFB |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Gate Emitter Leakage Current | 250 nA | 250 nA | 250 nA |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 600 | 600 | 600 |
Subcategory | IGBTs | IGBTs | IGBTs |