STH110N1

STH110N10F7-2 vs STH110N10F7-6

 
PartNumberSTH110N10F7-2STH110N10F7-6
DescriptionMOSFET N-Ch 100V 6mOhm 110A STripFET VIIMOSFET N-CH 100V 49mOhm 110A STripFET VII
ManufacturerSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseH2PAK-2TO-263-7
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V100 V
Id Continuous Drain Current110 A110 A
Rds On Drain Source Resistance6.5 mOhms6.5 mOhms
Vgs th Gate Source Threshold Voltage4 V2.5 V
Vgs Gate Source Voltage20 V20 V
Qg Gate Charge60 nC72 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation150 W150 W
ConfigurationSingleSingle
TradenameSTripFET-
PackagingReelReel
ProductPower MOSFET-
SeriesSTH110N10F7-2STH110N10F7
Transistor Type1 N-Channel1 N-Channel
BrandSTMicroelectronicsSTMicroelectronics
Product TypeMOSFETMOSFET
Factory Pack Quantity10001000
SubcategoryMOSFETsMOSFETs
Unit Weight0.139332 oz0.056438 oz
Channel Mode-Enhancement
Fall Time-21 ns
Rise Time-36 ns
Typical Turn Off Delay Time-52 ns
Typical Turn On Delay Time-25 ns
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STH110N10F7-2 MOSFET N-Ch 100V 6mOhm 110A STripFET VII
STH110N10F7-6 MOSFET N-CH 100V 49mOhm 110A STripFET VII
STH110N10F7-2 MOSFET N CH 100V 110A H2PAK
STH110N10F7-6 MOSFET N-CH 100V 110A H2PAK-6
STH110N10F7 New and Original
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