PartNumber | STH210N75F6-2 | STH210N75F6 | STH212002.1 |
Description | IGBT Transistors MOSFET N-ch 75V 0.0022 Ohm 180A STripFET VI | ||
Manufacturer | ST | ST | - |
Product Category | FETs - Single | FETs - Single | - |
Series | STH210N75F6-2 | STH210N75F6-2 | - |
Packaging | Reel | Reel | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package Case | TO-252-3 | TO-252-3 | - |
Technology | Si | Si | - |
Number of Channels | 1 Channel | 1 Channel | - |
Configuration | Single | Single | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Pd Power Dissipation | 300 W | 300 W | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Id Continuous Drain Current | 180 A | 180 A | - |
Vds Drain Source Breakdown Voltage | 75 V | 75 V | - |
Rds On Drain Source Resistance | 2.8 mOhms | 2.8 mOhms | - |
Transistor Polarity | N-Channel | N-Channel | - |
Qg Gate Charge | 171 nC | 171 nC | - |