 |  | | |
| PartNumber | STH210N75F6-2 | STH210N75F6 | STH212002.1 |
| Description | IGBT Transistors MOSFET N-ch 75V 0.0022 Ohm 180A STripFET VI | ||
| Manufacturer | ST | ST | - |
| Product Category | FETs - Single | FETs - Single | - |
| Series | STH210N75F6-2 | STH210N75F6-2 | - |
| Packaging | Reel | Reel | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package Case | TO-252-3 | TO-252-3 | - |
| Technology | Si | Si | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Configuration | Single | Single | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Pd Power Dissipation | 300 W | 300 W | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Id Continuous Drain Current | 180 A | 180 A | - |
| Vds Drain Source Breakdown Voltage | 75 V | 75 V | - |
| Rds On Drain Source Resistance | 2.8 mOhms | 2.8 mOhms | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Qg Gate Charge | 171 nC | 171 nC | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
STMicroelectronics |
STH210N75F6-2 | IGBT Transistors MOSFET N-ch 75V 0.0022 Ohm 180A STripFET VI | |
| STH210N75F6 | New and Original | ||
| STH212002.1 | New and Original | ||
| STH216064.1 | New and Original |