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| PartNumber | STH260N6F6-6 | STH260N6F6-2 |
| Description | MOSFET N-channel 60 V, 1.7 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-6 package | MOSFET N-Ch 60V 0.0016 Ohm 180A STripFET DG VI |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-7 | H2PAK-2 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 75 V |
| Id Continuous Drain Current | 180 A | 120 A |
| Rds On Drain Source Resistance | 2.4 mOhms | 2.4 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | 4 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 183 nC | 183 nC |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 175 C | - |
| Pd Power Dissipation | 300 W | 300 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | - |
| Tradename | STripFET | STripFET |
| Packaging | Reel | Reel |
| Series | STH260N6F6-6 | STH260N6F6-2 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics |
| Fall Time | 62.6 ns | 62.6 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 165 ns | 165 ns |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 144.4 ns | - |
| Typical Turn On Delay Time | 31.4 ns | - |
| Unit Weight | 0.056438 oz | 0.139332 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
STMicroelectronics |
STH260N6F6-6 | MOSFET N-channel 60 V, 1.7 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-6 package | |
| STH260N6F6-2 | MOSFET N-Ch 60V 0.0016 Ohm 180A STripFET DG VI | ||
| STH260N6F6-6 | IGBT Transistors MOSFET POWER MOSFET | ||
| STH260N6F6-2 | MOSFET N-CH 60V 180A H2PAK | ||
| STH260N6F6-6-CUT TAPE | New and Original |