STH315

STH315N10F7-2 vs STH315N10F7-6

 
PartNumberSTH315N10F7-2STH315N10F7-6
DescriptionMOSFET Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 packageMOSFET Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package
ManufacturerSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseH2PAK-2TO-263-7
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V100 V
Id Continuous Drain Current180 A180 A
Rds On Drain Source Resistance2.3 mOhms2.3 mOhms
Vgs th Gate Source Threshold Voltage3.5 V3.5 V
Vgs Gate Source Voltage20 V20 V
Qg Gate Charge180 nC180 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation315 W315 W
ConfigurationSingleSingle
QualificationAEC-Q101AEC-Q101
TradenameSTripFETSTripFET
PackagingReelReel
SeriesSTH315N10F7-2STH315N10F7-6
Transistor Type1 N-Channel1 N-Channel
BrandSTMicroelectronicsSTMicroelectronics
Fall Time40 ns40 ns
Product TypeMOSFETMOSFET
Rise Time108 ns108 ns
Factory Pack Quantity10001000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time148 ns148 ns
Typical Turn On Delay Time62 ns62 ns
Unit Weight0.139332 oz0.056438 oz
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STH315N10F7-2 MOSFET Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package
STH315N10F7-6 MOSFET Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package
STH315N10F7-2 Darlington Transistors MOSFET POWER MOSFET
STH315N10F7-6 IGBT Transistors MOSFET POWER MOSFET
STH315-YFAA New and Original
Top