STH80N

STH80N10F7-2 vs STH80N10LF7-2AG vs STH80N05

 
PartNumberSTH80N10F7-2STH80N10LF7-2AGSTH80N05
DescriptionMOSFET N-channel 100 V, 0.008 Ohm typ., 80 A STripFET F7 Power MOSFET in H2PAK-2 packageMOSFET N-channel 100 V, 0.008 Ohm typ., 80 A STripFET F7 Power MOSFET in H2PAK-2 package
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseH2PAK-2H2PAK-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current80 A80 A-
Rds On Drain Source Resistance9.5 mOhms10 mOhms-
Vgs th Gate Source Threshold Voltage4.5 V1 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge45 nC28.3 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation110 W110 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameSTripFET--
PackagingReel--
SeriesSTH80N10F7-2STH80N10LF7-2AG-
Transistor Type1 N-Channel1 N-Channel-
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time13 ns21 ns-
Product TypeMOSFETMOSFET-
Rise Time32 ns33 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time36 ns69.3 ns-
Typical Turn On Delay Time19 ns14.7 ns-
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STH80N10F7-2 MOSFET N-channel 100 V, 0.008 Ohm typ., 80 A STripFET F7 Power MOSFET in H2PAK-2 package
STH80N10LF7-2AG MOSFET N-channel 100 V, 0.008 Ohm typ., 80 A STripFET F7 Power MOSFET in H2PAK-2 package
STH80N10F7-2 MOSFET N-CH 100V 80A H2PAK-2
STH80N05 New and Original
STH80NF55-08 New and Original
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