 | | |
| PartNumber | STI12NM50N | STI12N65M5 |
| Description | MOSFET N-Ch, 500V-0.29ohms Mdmesh 11A | MOSFET N-channel 650 V 0.39 Ohm 8.5 A MDmesh |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-262-3 | TO-262-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 650 V |
| Id Continuous Drain Current | 11 A | 8.5 A |
| Rds On Drain Source Resistance | 380 mOhms | 430 mOhms |
| Vgs Gate Source Voltage | 25 V | 25 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 100 W | 70 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Tube | Tube |
| Height | 8.95 mm | - |
| Length | 10 mm | - |
| Series | STI12NM50N | STD12N65M5 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 4.4 mm | - |
| Brand | STMicroelectronics | STMicroelectronics |
| Fall Time | 14 ns | 15.6 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 15 ns | 17.6 ns |
| Factory Pack Quantity | 50 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 60 ns | - |
| Typical Turn On Delay Time | 15 ns | - |
| Unit Weight | 0.050717 oz | 0.050717 oz |
| Qg Gate Charge | - | 20 nC |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
STMicroelectronics |
STI12NM50N | MOSFET N-Ch, 500V-0.29ohms Mdmesh 11A | |
| STI12N65M5 | MOSFET N-channel 650 V 0.39 Ohm 8.5 A MDmesh | ||
| STI12N65M5 | IGBT Transistors MOSFET N-channel 650 V 0.39 Ohm 8.5 A MDmesh | ||
| STI12NM50N | MOSFET N-CH 500V 11A I2PAK | ||
| STI1206-21-PG | New and Original | ||
| STI120621PG | New and Original | ||
| STI120NH03L | New and Original |