PartNumber | STI14NM50N | STI14NM65N |
Description | MOSFET N-Ch 500 V 0.28 Ohm 12 A MDmesh(TM) II | MOSFET N-Ch, 650V-0.33ohms 12A |
Manufacturer | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-262-3 | TO-262-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 500 V | 650 V |
Id Continuous Drain Current | 12 A | 12 A |
Rds On Drain Source Resistance | 280 mOhms | 380 mOhms |
Vgs th Gate Source Threshold Voltage | 3 V | - |
Vgs Gate Source Voltage | 25 V | 25 V |
Qg Gate Charge | 27 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 90 W | 125 W |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Packaging | Tube | Tube |
Series | STI14NM50N | STB14NM65N |
Transistor Type | 1 N-Channel | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics |
Fall Time | 22 ns | 20 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 16 ns | 13 ns |
Factory Pack Quantity | 50 | 50 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 42 ns | 55 ns |
Typical Turn On Delay Time | 10.2 ns | 11 ns |
Unit Weight | 0.050717 oz | 0.050717 oz |
Height | - | 8.95 mm |
Length | - | 10 mm |
Width | - | 4.4 mm |