STI14

STI14NM50N vs STI14NM65N

 
PartNumberSTI14NM50NSTI14NM65N
DescriptionMOSFET N-Ch 500 V 0.28 Ohm 12 A MDmesh(TM) IIMOSFET N-Ch, 650V-0.33ohms 12A
ManufacturerSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-262-3TO-262-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage500 V650 V
Id Continuous Drain Current12 A12 A
Rds On Drain Source Resistance280 mOhms380 mOhms
Vgs th Gate Source Threshold Voltage3 V-
Vgs Gate Source Voltage25 V25 V
Qg Gate Charge27 nC-
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation90 W125 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
PackagingTubeTube
SeriesSTI14NM50NSTB14NM65N
Transistor Type1 N-Channel1 N-Channel
BrandSTMicroelectronicsSTMicroelectronics
Fall Time22 ns20 ns
Product TypeMOSFETMOSFET
Rise Time16 ns13 ns
Factory Pack Quantity5050
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time42 ns55 ns
Typical Turn On Delay Time10.2 ns11 ns
Unit Weight0.050717 oz0.050717 oz
Height-8.95 mm
Length-10 mm
Width-4.4 mm
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STI14NM50N MOSFET N-Ch 500 V 0.28 Ohm 12 A MDmesh(TM) II
STI14NM65N MOSFET N-Ch, 650V-0.33ohms 12A
STI14NM50N MOSFET N CH 500V 12A I2PAK
STI14NM65N MOSFET N-CH 650V 12A I2PAK
STI141CT80 New and Original
STI1430 New and Original
STI1430A New and Original
STI14NM65N-H New and Original
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