PartNumber | STI20N65M5 | STI20N60M2-EP | STI200N6F3 |
Description | MOSFET N-Ch 650 V 0.160 Ohm 18 A MDmesh(TM) M5 | MOSFET N-channel 600 V, 0.230 Ohm typ., 13 A MDmesh M2 EP Power MOSFET in an I2PAK package | MOSFET N-CH 60V 120A I2PAK |
Manufacturer | STMicroelectronics | STMicroelectronics | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-262-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 650 V | - | - |
Id Continuous Drain Current | 18 A | - | - |
Rds On Drain Source Resistance | 160 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 4 V | - | - |
Vgs Gate Source Voltage | 25 V | - | - |
Qg Gate Charge | 36 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 130 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | MDmesh | MDmesh | - |
Packaging | Tube | - | - |
Series | STI20N65M5 | STI20N60M2-EP | - |
Transistor Type | 1 N-Channel | - | - |
Brand | STMicroelectronics | STMicroelectronics | - |
Fall Time | 7.5 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 7.5 ns | - | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Unit Weight | 0.050717 oz | - | - |