STL105N

STL105N4LF7AG vs STL105NS3LLH vs STL105NS3LLH7

 
PartNumberSTL105N4LF7AGSTL105NS3LLHSTL105NS3LLH7
DescriptionMOSFET Automotive-grade N-channel 40 V, 8 mOhm typ.,15 A STripFET F7 Power MOSFET in PowerFLAT 5x6 packageMOSFET N-CH 30V 27A PWRFLAT56
ManufacturerSTMicroelectronicsSTST
Product CategoryMOSFETFETs - SingleFETs - Single
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerFLAT5x6-4--
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current105 A--
Rds On Drain Source Resistance4.5 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge23.3 nC--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 150 C+ 150 C
Pd Power Dissipation94 W--
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
SeriesSTL105N4LF7AGN-channel STripFETN-channel STripFET
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandSTMicroelectronics--
Fall Time15 ns12.5 ns12.5 ns
Product TypeMOSFET--
Rise Time6.5 ns10.4 ns10.4 ns
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time43 ns31.8 ns31.8 ns
Typical Turn On Delay Time10 ns26.4 ns26.4 ns
Packaging-ReelReel
Package Case-PowerFlat-8PowerFlat-8
Technology-SiSi
Pd Power Dissipation-62.5 W62.5 W
Vgs Gate Source Voltage-+/- 20 V+/- 20 V
Id Continuous Drain Current-27 A27 A
Vds Drain Source Breakdown Voltage-30 V30 V
Vgs th Gate Source Threshold Voltage-1.2 V1.2 V
Rds On Drain Source Resistance-3.9 mOhms3.9 mOhms
Qg Gate Charge-13.7 nC13.7 nC
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STL105N4LF7AG MOSFET Automotive-grade N-channel 40 V, 8 mOhm typ.,15 A STripFET F7 Power MOSFET in PowerFLAT 5x6 package
STL105NS3LLH7 MOSFET N-CH 30V 27A PWRFLAT56
STL105NS3LLH New and Original
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