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| PartNumber | STL12N60M2 | STL12N10F7 | STL12N3LLH5 |
| Description | MOSFET N-channel 600 V, 0.400 Ohm typ., 6.5 A MDmesh M2 Power MOSFET in PowerFLAT 5x6 HV package | MOSFET N-channel 100 V, 11.3 mOhm typ., 12 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package | MOSFET N-CH 30V 12A POWERFLAT |
| Manufacturer | STMicroelectronics | STMicroelectronics | ST |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerFLAT-5x6-HV-8 | PowerFLAT-8 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 100 V | - |
| Id Continuous Drain Current | 6.5 A | 44 A | - |
| Rds On Drain Source Resistance | 495 mOhms | 13.3 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | 2.5 V | - |
| Vgs Gate Source Voltage | 25 V | 20 V | - |
| Qg Gate Charge | 16 nC | 30 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 52 W | 52 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | MDmesh | STripFET | - |
| Packaging | Reel | - | Reel |
| Height | 1 mm | - | - |
| Length | 6.35 mm | - | - |
| Product | Power MOSFET | - | - |
| Series | STL12N60M2 | STL12N10F7 | STL12N3LLH5 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | MDmesh M2 | - | - |
| Width | 5.4 mm | - | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Fall Time | 18 ns | 8.9 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 9.2 ns | 8.7 ns | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 56 ns | 28.6 ns | - |
| Typical Turn On Delay Time | 9.2 ns | 22.4 ns | - |
| Package Case | - | - | PowerFlat-8 |
| Pd Power Dissipation | - | - | 50 W |
| Vgs Gate Source Voltage | - | - | 22 V |
| Id Continuous Drain Current | - | - | 12 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Rds On Drain Source Resistance | - | - | 9 mOhms |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
STMicroelectronics |
STL12N60M2 | MOSFET N-channel 600 V, 0.400 Ohm typ., 6.5 A MDmesh M2 Power MOSFET in PowerFLAT 5x6 HV package | |
| STL12N60M6 | MOSFET | ||
| STL12N10F7 | MOSFET N-channel 100 V, 11.3 mOhm typ., 12 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package | ||
| STL12N65M2 | MOSFET N-channel 650 V, 0.62 Ohm typ., 5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package | ||
| STL12N65M5 | MOSFET N-CH 650V 0.42 Ohm 8.5A MDmesh M5 | ||
| STL12N10F7 | N-CHANNEL 100V 12A STRIPFET F7 P | ||
| STL12N65M5 | MOSFET N-CH 650V 8.5A 8POWERFLAT | ||
| STL12N60M2 | MOSFET N-CH 600V 6.5A POWERFLAT | ||
| STL12N3LLH5 | MOSFET N-CH 30V 12A POWERFLAT | ||
| STL12N65M2 | MOSFET N-CH 650V 8.5A PWRFLAT56 | ||
| STL12N60M2-CUT TAPE | New and Original |