PartNumber | STL190N4F7AG | STL19N60M2 | STL19N60DM2 |
Description | MOSFET Automotive-grade N-channel 40 V, 1.68 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package | MOSFET N-channel 600 V, 0.278 Ohm typ., 11 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package | MOSFET |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | - | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerFLAT-5x6-8 | PowerFLAT-8x8-HV-5 | PowerFLAT-8x8-HV-5 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 40 V | 600 V | 650 V |
Id Continuous Drain Current | 120 A | 11 A | 11 A |
Rds On Drain Source Resistance | 1.68 mOhms | 278 mOhms | 320 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 4 V |
Vgs Gate Source Voltage | 20 V | 25 V | 25 V |
Qg Gate Charge | 41 nC | 21.5 nC | 21 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
Pd Power Dissipation | 127 W | 90 W | 90 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Qualification | AEC-Q101 | - | - |
Tradename | STripFET | MDmesh | - |
Packaging | Reel | Reel | Reel |
Series | STL190N4F7AG | STL19N60M2 | STL19N60DM2 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Fall Time | 6.5 ns | 10.6 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 6.4 ns | 9 ns | - |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 25 ns | 47 ns | - |
Typical Turn On Delay Time | 19 ns | 12 ns | - |
Forward Transconductance Min | - | - | - |
Development Kit | - | - | - |
Moisture Sensitive | - | - | Yes |