STL73

STL73 vs STL73D-AP vs STL73D

 
PartNumberSTL73STL73D-APSTL73D
DescriptionBipolar Transistors - BJT POWER TRANSISTORBipolar Transistors - BJT High voltage Fast Switch NPN Pwr TransBipolar Transistors - BJT H/V FST SWCH PW TRNS NPN
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single, Pre-BiasedTransistors - Bipolar (BJT) - RF
RoHSY--
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-92-3--
Transistor PolarityNPN-NPN
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max400 V--
Emitter Base Voltage VEBO9 V to 18 V--
Collector Emitter Saturation Voltage400 mV--
Maximum DC Collector Current3 A-3 A
Minimum Operating Temperature- 65 C-- 65 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesSTL73-500V to 1000V Transistors
Height4.95 mm--
Length4.95 mm--
Width3.94 mm--
BrandSTMicroelectronics--
Continuous Collector Current1.5 A-1.5 A
Pd Power Dissipation1.5 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.016000 oz-0.016000 oz
Packaging-Cut Tape (CT) Alternate PackagingBulk
Package Case-TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92
Mounting Type-Through Hole-
Supplier Device Package-TO-92AP-
Power Max-1.5W-
Transistor Type-NPN-
Current Collector Ic Max-1.5A-
Voltage Collector Emitter Breakdown Max-400V-
DC Current Gain hFE Min Ic Vce-10 @ 600mA, 3V-
Vce Saturation Max Ib Ic-1V @ 250mA, 1A-
Current Collector Cutoff Max---
Frequency Transition---
Pd Power Dissipation--1.5 W
Collector Emitter Voltage VCEO Max--700 V
Emitter Base Voltage VEBO--18 V
DC Collector Base Gain hfe Min--10
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STL73 Bipolar Transistors - BJT POWER TRANSISTOR
STL73D-AP Bipolar Transistors - BJT High voltage Fast Switch NPN Pwr Trans
STL73D Bipolar Transistors - BJT H/V FST SWCH PW TRNS NPN
STL73 Bipolar Transistors - BJT POWER TRANSISTOR
STL73-AP New and Original
STL73E New and Original
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