PartNumber | STLD1 | STLD128DNT4 | STLD125N4F6AG |
Description | LIN Transceivers IND. & POWER CONV. | Bipolar Transistors - BJT NPN power transistor | MOSFET Automotive-grade N-channel 40 V, 2.4 mOhm typ., 120 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 dual side cooling package |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | LIN Transceivers | Bipolar Transistors - BJT | MOSFET |
Operating Supply Voltage | 8 V to 18 V | - | - |
Minimum Operating Temperature | - 40 C | - 65 C | - 55 C |
Maximum Operating Temperature | + 105 C | + 150 C | + 175 C |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | QFN-24 | DPAK-3 | PowerFLAT-5x6-8 |
Series | STLD1 | STL128DN | STLD125N4F6AG |
Type | Power-Line Communication | - | - |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Number of Channels | 2 Channel | - | 1 Channel |
Number of Drivers | 2 Driver | - | - |
Number of Receivers | 2 Receiver | - | - |
Product Type | LIN Transceivers | BJTs - Bipolar Transistors | MOSFET |
Factory Pack Quantity | 2940 | 2500 | 2500 |
Subcategory | Interface ICs | Transistors | MOSFETs |
Supply Voltage Max | 18 V | - | - |
Supply Voltage Min | 8 V | - | - |
RoHS | - | Y | Y |
Transistor Polarity | - | NPN | N-Channel |
Configuration | - | Single | Single |
Collector Emitter Voltage VCEO Max | - | 400 V | - |
Emitter Base Voltage VEBO | - | 18 V | - |
Maximum DC Collector Current | - | 6 A | - |
DC Current Gain hFE Max | - | 10 | - |
Height | - | 2.4 mm | - |
Length | - | 6.2 mm | - |
Packaging | - | Reel | - |
Width | - | 6.6 mm | - |
Continuous Collector Current | - | 3 A | - |
DC Collector/Base Gain hfe Min | - | 8 | - |
Pd Power Dissipation | - | 20 W | 130 W |
Unit Weight | - | 0.009185 oz | - |
Technology | - | - | Si |
Vds Drain Source Breakdown Voltage | - | - | 40 V |
Id Continuous Drain Current | - | - | 120 A |
Rds On Drain Source Resistance | - | - | 2.4 mOhms |
Vgs th Gate Source Threshold Voltage | - | - | 2 V |
Vgs Gate Source Voltage | - | - | 20 V |
Qg Gate Charge | - | - | 91 nC |
Channel Mode | - | - | Enhancement |
Qualification | - | - | AEC-Q101 |
Tradename | - | - | STripFET |
Transistor Type | - | - | 1 N-Channel |
Fall Time | - | - | 220 ns |
Rise Time | - | - | 300 ns |
Typical Turn Off Delay Time | - | - | 255 ns |
Typical Turn On Delay Time | - | - | 47 ns |