PartNumber | STP100N6F7 | STP100N8F6 | STP100N10F7 |
Description | MOSFET N-channel 60 V, 4.7 mOhm typ., 100 A STripFET F7 Power MOSFET in a TO-220 package | MOSFET N-channel 80 V, 0.008 Ohm typ., 100 A, STripFET F6 Power MOSFET in a TO-220 package | MOSFET N-Ch 100V 0.0068mOhm 80A STripFETVII 150W |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 80 V | 100 V |
Id Continuous Drain Current | 100 A | 100 A | 80 A |
Rds On Drain Source Resistance | 5.6 mOhms | 8 mOhms | 8 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 4 V |
Vgs Gate Source Voltage | 10 V | 20 V | 20 V |
Qg Gate Charge | 30 nC | 100 nC | 56 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 125 W | 176 W | 150 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | - |
Tradename | STripFET | STripFET | STripFET |
Packaging | Tube | Tube | Tube |
Series | STP100N6F7 | STP100N8F6 | STP100N10F7 |
Transistor Type | 1 N-Channel Power MOSFET | 1 N-Channel | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Fall Time | 15 ns | 21 ns | 16 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 55.5 ns | 46 ns | 40 ns |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 28.6 ns | 103 ns | 46 ns |
Typical Turn On Delay Time | 21.6 ns | 33 ns | 27 ns |
Unit Weight | 0.011640 oz | 0.011640 oz | 0.011640 oz |
Product | - | - | Power MOSFET |