PartNumber | STP24N60M6 | STP24N60M2 | STP24N60DM2 |
Description | MOSFET N-channel 600 V, 105 mOhm typ., 22 A MDmesh M6 Power MOSFET in a TO-220 package | MOSFET N-Ch 600V 0.168 Ohm 18A Mdmesh M2 | MOSFET N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2 |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
Id Continuous Drain Current | 22 A | 18 A | 18 A |
Rds On Drain Source Resistance | 190 mOhms | 168 mOhms | 200 mOhms |
Configuration | Single | Single | Single |
Packaging | Tube | Tube | Tube |
Series | M6 | STP24N60M2 | STP24N60DM2 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Vgs th Gate Source Threshold Voltage | - | 3 V | 4 V |
Qg Gate Charge | - | 29 nC | 29 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 150 W | 150 W |
Tradename | - | MDmesh | FDmesh |
Fall Time | - | 61 ns | 15 ns |
Rise Time | - | 9 ns | 8.7 ns |
Typical Turn Off Delay Time | - | 15 ns | 60 ns |
Typical Turn On Delay Time | - | 14 ns | 15 ns |
Unit Weight | - | 0.011640 oz | 0.011640 oz |
Vgs Gate Source Voltage | - | - | 25 V |