PartNumber | STP25N60M2-EP | STP25N10F7 | STP25N80K5 |
Description | MOSFET N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220 package | MOSFET N-Ch 100V 0.027 Ohm typ 25A STripFET VII | MOSFET N-Ch 800V 0.19 Ohm 19.5 A MDmesh K5 |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 100 V | 800 V |
Id Continuous Drain Current | 18 A | 25 A | 19.5 A |
Rds On Drain Source Resistance | 188 mOhms | 35 mOhms | 260 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | 4.5 V | 4 V |
Vgs Gate Source Voltage | 25 V | 20 V | 30 V |
Qg Gate Charge | 29 nC | 14 nC | 40 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 175 C | + 150 C |
Pd Power Dissipation | 150 W | 50 W | 250 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | - | Enhancement |
Tradename | MDmesh | STripFET | MDmesh |
Series | STP25N60M2-EP | STP25N10F7 | STP25N80K5 |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Fall Time | 16 ns | 4.6 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 10 ns | 14 ns | - |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 61 ns | 14.8 ns | - |
Typical Turn On Delay Time | 15 ns | 9.8 ns | - |
Unit Weight | 0.011640 oz | 0.011640 oz | 0.011640 oz |
Packaging | - | Tube | Tube |
Transistor Type | - | 1 N-Channel | 1 N-Channel |