PartNumber | STP26N60DM6 | STP26N60M2 | STP26N65DM2 |
Description | MOSFET N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM6 Power MOSFET in TO-220 package | MOSFET N-channel 600 V, 0.14 Ohm typ., 20 A MDmesh M2 Power MOSFET in a TO-220 package | MOSFET |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-220-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 600 V | - | - |
Id Continuous Drain Current | 18 A | - | - |
Rds On Drain Source Resistance | 195 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 3.25 V | - | - |
Vgs Gate Source Voltage | 25 V | - | - |
Qg Gate Charge | 24 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 130 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Tube | - | - |
Transistor Type | 1 N-Channel | - | - |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Fall Time | 8 ns | - | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 11 ns | - | - |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 39 ns | - | - |
Typical Turn On Delay Time | 13 ns | - | - |
Tradename | - | MDmesh | - |
Series | - | STP26N60M2 | STP26N65DM2 |
Technology | - | - | Si |