PartNumber | STP28N65M2 | STP28N60M2 | STP28N60DM2 |
Description | MOSFET N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-220 package | MOSFET N-CH 600V 0.135Ohm typ. 22A MDmesh M2 | MOSFET N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in TO-220 package |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 600 V | 600 V |
Id Continuous Drain Current | 20 A | 24 A | 22 A |
Rds On Drain Source Resistance | 150 mOhms | 120 mOhms | 130 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | 3 V | 3 V |
Vgs Gate Source Voltage | 25 V | 25 V | 25 V |
Qg Gate Charge | 35 nC | 37 nC | 39 nC |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 170 W | 190 W | 190 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | - | Enhancement |
Tradename | MDmesh | MDmesh | MDmesh |
Packaging | Tube | Tube | - |
Series | STP28N65M2 | STP28N60M2 | STP28N60DM2 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Fall Time | 8.8 ns | - | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 10 ns | - | - |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 59 ns | - | - |
Typical Turn On Delay Time | 13.4 ns | - | - |
Unit Weight | 0.011640 oz | 0.011640 oz | 0.011640 oz |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Forward Transconductance Min | - | - | - |