PartNumber | STP30N65M5 | STP30N10F7 | STP30N20 |
Description | MOSFET N-channel 650 V MDMesh | MOSFET N-channel 100 V, 0.02 Ohm typ., 32 A STripFET F7 Power MOSFET in a TO-220 package | MOSFET N-CH 200V 30A TO-220 |
Manufacturer | STMicroelectronics | STMicroelectronics | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-220-3 | TO-220-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 650 V | 100 V | - |
Id Continuous Drain Current | 22 A | 32 A | - |
Rds On Drain Source Resistance | 125 mOhms | 24 mOhms | - |
Vgs Gate Source Voltage | 25 V | 20 V | - |
Qg Gate Charge | 64 nC | 19 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 175 C | - |
Pd Power Dissipation | 140 W | 50 W | - |
Configuration | Single | Single | - |
Tradename | MDmesh | STripFET | - |
Packaging | Tube | Tube | - |
Series | STP30N65M5 | STP30N10F7 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | STMicroelectronics | STMicroelectronics | - |
Fall Time | 10 ns | 5.6 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 8 ns | 17.5 ns | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 50 ns | 22 ns | - |
Unit Weight | 0.011640 oz | 0.079014 oz | - |
Vgs th Gate Source Threshold Voltage | - | 4.5 V | - |
Channel Mode | - | Enhancement | - |
Forward Transconductance Min | - | - | - |
Development Kit | - | - | - |
Typical Turn On Delay Time | - | 12 ns | - |