PartNumber | STP33N60DM2 | STP33N60M2 | STP33N60DM6 |
Description | MOSFET N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-220 package | MOSFET N-CH 600V 0.108Ohm typ. 26A MDmesh M2 | MOSFET |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 600 V | 600 V |
Id Continuous Drain Current | 24 A | 26 A | 25 A |
Rds On Drain Source Resistance | 130 mOhms | 108 mOhms | 128 mOhms |
Vgs th Gate Source Threshold Voltage | 3 V | 3 V | 3.25 V |
Vgs Gate Source Voltage | 25 V | 25 V | 25 V |
Qg Gate Charge | 43 nC | 45.5 nC | 35 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 190 W | 190 W | 190 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | - | Enhancement |
Tradename | MDmesh | MDmesh | - |
Series | STP33N60DM2 | STP33N60M2 | - |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Fall Time | 9 ns | 9 ns | 35 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 8 ns | 9.6 ns | 9 ns |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 62 ns | 109 ns | 7 ns |
Typical Turn On Delay Time | 17 ns | 16 ns | 14 ns |
Unit Weight | 0.011640 oz | 0.011640 oz | - |
Packaging | - | Tube | - |
Transistor Type | - | 1 N-Channel | 1 N-Channel |