| PartNumber | STP40N60M2 | STP40N20 | STP400N4F6 |
| Description | MOSFET N-CH 600V 0.078Ohm typ. 34A MDmesh M2 | MOSFET N-Ch 200 Volt 40 Amp | MOSFET N-CH 40V TO-220 |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 200 V | - |
| Id Continuous Drain Current | 34 A | 40 A | - |
| Rds On Drain Source Resistance | 88 mOhms | 45 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 25 V | 20 V | - |
| Qg Gate Charge | 57 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 175 C |
| Pd Power Dissipation | 250 W | 160 W | - |
| Configuration | Single | Single | Single |
| Packaging | Tube | Tube | Tube |
| Series | STP40N60M2 | STB40N20 | N-channel STripFET |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Fall Time | 11 ns | 24 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 13.5 ns | 44 ns | - |
| Factory Pack Quantity | 1000 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 96 ns | 74 ns | - |
| Typical Turn On Delay Time | 20.5 ns | 20 ns | - |
| Unit Weight | 0.011640 oz | 0.011640 oz | 0.011640 oz |
| Channel Mode | - | Enhancement | - |
| Height | - | 9.15 mm | - |
| Length | - | 10.4 mm | - |
| Width | - | 4.6 mm | - |
| Package Case | - | - | TO-220-3 |
| Pd Power Dissipation | - | - | 300 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 120 A |
| Vds Drain Source Breakdown Voltage | - | - | 40 V |
| Vgs th Gate Source Threshold Voltage | - | - | 4.5 V |
| Rds On Drain Source Resistance | - | - | 1.7 mOhms |
| Qg Gate Charge | - | - | 377 nC |