PartNumber | STP45N65M5 | STP45N60DM6 |
Description | MOSFET N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS | MOSFET N-channel 600 V, 0.085 typ., 30 A MDmesh DM6 Power MOSFETs in TO-220 and TO-247 packages |
Manufacturer | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 600 V |
Id Continuous Drain Current | 35 A | 30 A |
Rds On Drain Source Resistance | 78 mOhms | 99 mOhms |
Pd Power Dissipation | 208 W | 210 W |
Configuration | Single | Single |
Tradename | MDmesh | MDmesh |
Packaging | Tube | - |
Series | STP45N65M5 | STP45N60DM6 |
Transistor Type | 1 N-Channel | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics |
Product Type | MOSFET | MOSFET |
Factory Pack Quantity | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs |
Unit Weight | 0.011640 oz | - |
Vgs th Gate Source Threshold Voltage | - | 3.25 V |
Vgs Gate Source Voltage | - | 25 V |
Qg Gate Charge | - | 44 nC |
Minimum Operating Temperature | - | - 55 C |
Maximum Operating Temperature | - | + 150 C |
Channel Mode | - | Enhancement |
Fall Time | - | 7.3 ns |
Rise Time | - | 5.3 ns |
Typical Turn Off Delay Time | - | 50 ns |
Typical Turn On Delay Time | - | 15 ns |