PartNumber | STP57N65M5 | STP55NF06FP | STP55NF06L |
Description | MOSFET N-Ch 650V 0.056 Ohm 42 A MDmesh M5 | MOSFET N-Ch 60 Volt 55 Amp | MOSFET N-CH 60V 55A TO-220 |
Manufacturer | STMicroelectronics | STMicroelectronics | ST |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220FP-3 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 60 V | - |
Id Continuous Drain Current | 26.5 A | 50 A | - |
Rds On Drain Source Resistance | 63 mOhms | 15 mOhms | - |
Pd Power Dissipation | 250 W | 30 W | - |
Configuration | Single | Single | Single |
Tradename | MDmesh | STripFET | - |
Packaging | Tube | Tube | Tube |
Series | STP57N65M5 | STP55NF06FP | N-channel STripFET |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Unit Weight | 0.011640 oz | 0.071959 oz | 0.011640 oz |
Vgs th Gate Source Threshold Voltage | - | 3 V | - |
Vgs Gate Source Voltage | - | 20 V | - |
Qg Gate Charge | - | 44.5 nC | - |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 175 C | + 175 C |
Channel Mode | - | Enhancement | Enhancement |
Height | - | 9.3 mm | - |
Length | - | 10.4 mm | - |
Type | - | MOSFET | - |
Width | - | 4.6 mm | - |
Forward Transconductance Min | - | 18 S | - |
Fall Time | - | 15 ns | 20 ns |
Rise Time | - | 50 ns | 100 ns |
Typical Turn Off Delay Time | - | 36 ns | 40 ns |
Typical Turn On Delay Time | - | 20 ns | 20 ns |
Package Case | - | - | TO-220-3 |
Pd Power Dissipation | - | - | 95 W |
Vgs Gate Source Voltage | - | - | 16 V |
Id Continuous Drain Current | - | - | 55 A |
Vds Drain Source Breakdown Voltage | - | - | 60 V |
Rds On Drain Source Resistance | - | - | 14 mOhms |
Forward Transconductance Min | - | - | 30 S |