PartNumber | STP6N60M2 | STP6N52K3 | STP6N120K3 |
Description | MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2 | MOSFET N-CH 525V 5A TO-220 | MOSFET N-CH 1200V 6A TO-220 |
Manufacturer | STMicroelectronics | - | ST |
Product Category | MOSFET | - | FETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | Through Hole | - | Through Hole |
Package / Case | TO-220-3 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | - | - |
Id Continuous Drain Current | 4.5 A | - | - |
Rds On Drain Source Resistance | 1.06 Ohms | - | - |
Vgs th Gate Source Threshold Voltage | 3 V | - | - |
Vgs Gate Source Voltage | 25 V | - | - |
Qg Gate Charge | 8 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 60 W | - | - |
Configuration | Single | - | Single |
Tradename | MDmesh | - | - |
Packaging | Tube | - | Tube |
Series | STP6N60M2 | - | SuperMESH3 |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Brand | STMicroelectronics | - | - |
Fall Time | 22.5 ns | - | 32 ns |
Product Type | MOSFET | - | - |
Rise Time | 7.4 ns | - | 12 ns |
Factory Pack Quantity | 1000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 24 ns | - | 58 ns |
Typical Turn On Delay Time | 9.5 ns | - | 30 ns |
Unit Weight | 0.011640 oz | - | 0.011640 oz |
Package Case | - | - | TO-220-3 |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Through Hole |
Supplier Device Package | - | - | TO-220 |
FET Type | - | - | MOSFET N-Channel, Metal Oxide |
Power Max | - | - | 150W |
Drain to Source Voltage Vdss | - | - | 1200V (1.2kV) |
Input Capacitance Ciss Vds | - | - | 1050pF @ 100V |
FET Feature | - | - | Standard |
Current Continuous Drain Id 25°C | - | - | 6A (Tc) |
Rds On Max Id Vgs | - | - | 2.4 Ohm @ 2.5A, 10V |
Vgs th Max Id | - | - | 5V @ 100μA |
Gate Charge Qg Vgs | - | - | 34nC @ 10V |
Pd Power Dissipation | - | - | 150 W |
Vgs Gate Source Voltage | - | - | 30 V |
Id Continuous Drain Current | - | - | 6 A |
Vds Drain Source Breakdown Voltage | - | - | 1200 V |
Rds On Drain Source Resistance | - | - | 2.4 Ohms |
Qg Gate Charge | - | - | 34 nC |
Channel Mode | - | - | Enhancement |